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| Shantou Huashan Electronic Devices Co.,Ltd. NPN S I L I C O N T R A N S I S T O R HSBD439 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGS a=25ae(c) T T stg Storage Temperature---------- 55~150ae T j J unction Temperature-----------150ae PCCollector Dissipation c=25ae T (c)-------36W VCBO Collector-Base Voltage----------60V VCEO Collector-Emitter Voltage---------60V VCES Collector-Emitter Voltage ---------60V VEBO Emitter-Base Voltage------------5V ICCollector Current Pulse(c)------------7A ICCollector Current (c) DC -------------4A IBBase Current-----------------1A 1D Emitter, E 2D Collector C 3D Base B ELECTRICAL CHARACTERISTICS a=25ae(c) T Symbol Characteristics Min Typ Max Unit Test Conditions ICBO IEBO ICES Collector Cut-off Current Emitter Cut-off Current Collector Cut-off Current 20 40 25 130 140 100 1 100 |I VCB=60V, IE=0 A mA VEB=5V, IC=0 |I VCE=60V, VEB=0 A VCE=5V, IC=10mA VCE=1V, IC=500mA VCE=1V, IC=2A *HFE 1(c) DC Current Gain *HFE 2(c) DC Current Gain *HFE 3(c) DC Current Gain *VCE(sat) *VBE(on1) *VBE(on2) VCEO(sus) ft Collector- Emitter Saturation Voltage Base-Emitter On Voltage Base-Emitter On Voltage Collector-Emitter Sustaining Voltage Current Gain-Bandwidth Product 0.8 0.58 1.5 60 3 V V V V IC=2A, IB =0.2A VCE=5V, IC=10mA VCE=1V, IC=2A IC=100mA, IB=0 MHz VCE=1V, IC=250mA, * Pulse Test:PW=300 |I Duty Cyc l e=1.5% Pulsed S, |
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